| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2DA1213O |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 2 |
2DA1213O-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 3 |
2DA1213Y |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 4 |
2DA1213Y-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 5 |
2SA1213 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 6 |
2SA1213-O |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
2SA1213-Y |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 8 |
ATA121302 |
The ATA121302D1C is a 1.25 Gb/s Transimpedence amplifier possessing automatic gain control. |
Anadigics Inc |
| 9 |
ATA121302 |
The ATA121302D1C is a 1.25 Gb/s Transimpedence amplifier possessing automatic gain control. |
Anadigics Inc |
| 10 |
ATA121302D1C |
1.25 Gb/s Transimpedance Amplifier |
Anadigics Inc |
| 11 |
CXA1213AS |
Y/C/Jungle IC for PAL/NTSC |
SONY |
| 12 |
EIA1213-2P |
12.75-13.25GHz, 2W internally matched power FET |
Excelics Semiconductor |
| 13 |
EIA1213-4P |
12.75-13.25GHz, 4W internally matched power FET |
Excelics Semiconductor |
| 14 |
HA12133MP |
PRE, REC, eguallzer IC for R-DAT |
Hitachi Semiconductor |
| 15 |
HA12134A |
Dolby-B type noise reduction system |
Hitachi Semiconductor |
| 16 |
HA12134AF |
Dolby-B type noise reduction system |
Hitachi Semiconductor |
| 17 |
HA12135A |
Dolby-B type noise reduction system |
Hitachi Semiconductor |
| 18 |
HA12135AF |
Dolby-B type noise reduction system |
Hitachi Semiconductor |
| 19 |
HA12136A |
Dolby-B type noise reduction system |
Hitachi Semiconductor |
| 20 |
HA12136AF |
Dolby-B type noise reduction system |
Hitachi Semiconductor |
| | | |
