| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MHPA19010 |
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier |
Motorola |
| 2 |
MHPA19010 |
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier |
Motorola |
| 3 |
RMPA1901-53 |
PCS CDMA GaAs power amplifier MMIC |
Raytheon |
| 4 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
| 5 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR Data Sheet |
Samsung Electronic |
| 6 |
S5A1901H02-Q0R0 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
| 7 |
TPS7A1901DRBR |
40-V, 450-mA, Low IQ, Low-Dropout Voltage Regulator with Power Good 8-SON -40 to 105 |
Texas Instruments |
| 8 |
TPS7A1901DRBT |
40-V, 450-mA, Low IQ, Low-Dropout Voltage Regulator with Power Good 8-SON -40 to 105 |
Texas Instruments |
| 9 |
UPA1901 |
Nch enhancement type MOS FET |
NEC |
| 10 |
UPA1901TE |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11 |
UPA1901TE-T1 |
Nch enhancement type MOS FET |
NEC |
| 12 |
UPA1901TE-T2 |
Nch enhancement type MOS FET |
NEC |
| | | |
