| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 2 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 3 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 4 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 5 |
CSA537B |
0.750W General Purpose PNP Metal Can Transistor. 50V Vceo, 0.700A Ic, 50 - 100 hFE. |
Continental Device India Limited |
| 6 |
NX8567SA537-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1553.731nm. Frequency 192.95 THz. FC-UPC connector. |
NEC |
| 7 |
NX8567SA537-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1553.731 nm. Frequency 192.95 THz. SC-UPC connector. |
NEC |
| | | |
