| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 2 |
CHA5390 |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 3 |
CHA5390-99F |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 4 |
CHA5390TBF |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 5 |
CHA5390TBF/24 |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 6 |
CSA539 |
W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 40 - 240 hFE |
Continental Device India Limited |
| 7 |
CSA539O |
W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 70 - 140 hFE |
Continental Device India Limited |
| 8 |
CSA539R |
W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 40 - 80 hFE |
Continental Device India Limited |
| 9 |
CSA539Y |
W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 120 - 240 hFE |
Continental Device India Limited |
| 10 |
KSA539 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 11 |
KSA539 |
PNP Epitaxial Silicon low frequency Transistor |
Samsung Electronic |
| 12 |
KSA539CYBU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 13 |
KSA539CYTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14 |
KSA539OTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 15 |
KSA539YBU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 16 |
KSA539YTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 17 |
KTA539 |
General Purpose Transistor |
Korea Electronics (KEC) |
| | | |
