No. |
Part Name |
Description |
Manufacturer |
1 |
15049AC |
Surge arrester (gas filled). Nominal breakdown voltage 120VAC. |
NTE Electronics |
2 |
15050AC |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC. |
NTE Electronics |
3 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
4 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
5 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
6 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
7 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
8 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
9 |
2N5754 |
2.5-A silicon triac. Voltage(typ) 100 V. |
General Electric Solid State |
10 |
2N5755 |
2.5-A silicon triac. Voltage(typ) 200 V. |
General Electric Solid State |
11 |
2N5756 |
2.5-A silicon triac. Voltage(typ) 400 V. |
General Electric Solid State |
12 |
2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. |
General Electric Solid State |
13 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
14 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
15 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
16 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
17 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
18 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
19 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
20 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
21 |
2N6342A |
12-A silicon triac. 200 V. |
General Electric Solid State |
22 |
2N6343A |
12-A silicon triac. 400 V. |
General Electric Solid State |
23 |
2N6344A |
12-A silicon triac. 600 V. |
General Electric Solid State |
24 |
2N6345A |
12-A silicon triac. 800 V. |
General Electric Solid State |
25 |
2N6346A |
12-A silicon triac. 200 V. |
General Electric Solid State |
26 |
2N6347A |
12-A silicon triac. 400 V. |
General Electric Solid State |
27 |
2N6348A |
12-A silicon triac. 600 V. |
General Electric Solid State |
28 |
2N6349A |
12-A silicon triac. 800 V. |
General Electric Solid State |
29 |
AD7398BR-REEL |
0.3-7V; quad, serial-input 12-bit DAC. For automatic output span voltage, portable communications |
Analog Devices |
30 |
AD7398BRU-REEL |
0.3-7V; quad, serial-input 12-bit DAC. For automatic output span voltage, portable communications |
Analog Devices |
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