No. |
Part Name |
Description |
Manufacturer |
1 |
DS1220AD-200 |
2k x 8 CMOS nonvolatile SRAM, 200ns |
Dallas Semiconductor |
2 |
DS1220AD-200 |
64k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
3 |
DS1220AD-200+ |
16k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
4 |
DS1220AD-200-IND |
2k x 8 CMOS nonvolatile SRAM, 200ns |
Dallas Semiconductor |
5 |
DS1220AD-200-IND |
16k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
6 |
DS1220AD-200-IND |
16k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
7 |
DS1220AD-200IND |
64k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
8 |
DS1220AD-200IND+ |
16k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
9 |
DS1225AD-200 |
64K Nonvolatile SRAM |
Dallas Semiconductor |
10 |
DS1225AD-200 |
64k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
11 |
DS1225AD-200+ |
64k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
12 |
DS1225AD-200-IND |
64K Nonvolatile SRAM |
Dallas Semiconductor |
13 |
DS1225AD-200IND |
64k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
14 |
DS1225AD-200IND+ |
64k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
15 |
GS88218AD-200 |
200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
16 |
GS88218AD-200I |
200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
17 |
GS88236AD-200 |
200MHz 6.5ns 256K x 36 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
18 |
GS88236AD-200I |
200MHz 6.5ns 256K x 36 9Mb SCD/DCD sync burst SRAM |
GSI Technology |
19 |
GS882Z18AD-200 |
200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
20 |
GS882Z18AD-200I |
200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
21 |
GS882Z36AD-200 |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
22 |
GS882Z36AD-200I |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
23 |
LH52258AD-20 |
CMOS 32K x 8 static RAM |
SHARP |
24 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
25 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
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