| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2222AHR |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 2 |
2N2222AHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 3 |
2N2222AHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 4 |
2N2222ARHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 5 |
2N2222ARHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 6 |
2N2222ARUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 7 |
2N2222ARUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 8 |
2N2222AUB1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 9 |
2N2222AUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 10 |
2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 11 |
J2N2222AUB1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 12 |
JANS2N2222AUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 13 |
JANS2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 14 |
JANSR2N2222AUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 15 |
JANSR2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 16 |
KM416RD8AD-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 17 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 18 |
KM416RD8AD-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 19 |
KM418RD8AD-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 20 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 21 |
KM418RD8AD-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 22 |
MA02203AD-R13 |
3.6 V, 450 mW DECT RF power amplifier IC |
MA-Com |
| 23 |
MA02203AD-R13 |
3.6 V, 450 mW DECT RF Power Amplifier IC |
Tyco Electronics |
| 24 |
MA02203AD-R7 |
3.6 V, 450 mW DECT RF power amplifier IC |
MA-Com |
| 25 |
MA02203AD-R7 |
3.6 V, 450 mW DECT RF Power Amplifier IC |
Tyco Electronics |
| 26 |
SOC2222A1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 27 |
SOC2222AHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 28 |
SOC2222AHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 29 |
SOC2222ARHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 30 |
SOC2222ARHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| | | |
