No. |
Part Name |
Description |
Manufacturer |
1 |
AEY13 |
Low noise microwave amplifier in S band diode |
Mullard |
2 |
AEY15 |
Low noise microwave amplifier in S band diode |
Mullard |
3 |
AEY16 |
Low noise microwave amplifier in S band diode |
Mullard |
4 |
AEY17 |
Germanium bonded backward diode for use at X band |
Mullard |
5 |
AEY23 |
Tunnel Diode |
Philips |
6 |
AEY24 |
Tunnel Diode |
Philips |
7 |
AEY25 |
Tunnel Diode |
Philips |
8 |
AEY26 |
Tunnel Diode |
Philips |
9 |
AEY27 |
Tunnel Diode |
Philips |
10 |
AEY28 |
Tunnel Diode |
Philips |
11 |
AEY29 |
Detector diode |
mble |
12 |
AEY29 |
Germanium bonded backward diode for use at J band |
Mullard |
13 |
AEY29R |
Detector diode |
mble |
14 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
15 |
AEY30A |
Germanium Tunnel Diode |
Siemens |
16 |
AEY30A |
Germanium Tunnel Diode |
Siemens |
17 |
AEY30A |
Germanium tunnel diode |
Siemens |
18 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
19 |
AEY30B |
Germanium Tunnel Diode |
Siemens |
20 |
AEY30B |
Germanium Tunnel Diode |
Siemens |
21 |
AEY30B |
Germanium tunnel diode |
Siemens |
22 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
23 |
AEY30C |
Germanium Tunnel Diode |
Siemens |
24 |
AEY30C |
Germanium Tunnel Diode |
Siemens |
25 |
AEY30C |
Germanium tunnel diode |
Siemens |
26 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
27 |
AEY30D |
Germanium Tunnel Diode |
Siemens |
28 |
AEY30D |
Germanium Tunnel Diode |
Siemens |
29 |
AEY30D |
Germanium tunnel diode |
Siemens |
30 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
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