| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10 SIP |
10SIP Package Dimensions |
Samsung Electronic |
| 2 |
10 SIP H/S |
10SIP H/S Package Dimensions |
Samsung Electronic |
| 3 |
11DF2 |
FRD LOW FORWARD VOLTAGE DROP |
Nihon |
| 4 |
11DF4 |
LOW FORWARD VOLTAGE DROP |
Nihon |
| 5 |
12 DIP H/S |
Package Dimensions |
Samsung Electronic |
| 6 |
12 DIP/F |
12DIP/F Package Dimensions |
Samsung Electronic |
| 7 |
12 SIP |
12SIP Package Dimensions |
Samsung Electronic |
| 8 |
12 SIP H/S |
12SIP H/S Package Dimensions |
Samsung Electronic |
| 9 |
12 ZSIP-H/S |
Package Dimensions |
Samsung Electronic |
| 10 |
14 DIP |
Package Dimensions |
Samsung Electronic |
| 11 |
14 DIP H/S |
Package Dimensions |
Samsung Electronic |
| 12 |
14 SOP |
14SOP Package Dimensions |
Samsung Electronic |
| 13 |
15JGQ100 |
35A 100V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N7043CAT1 |
International Rectifier |
| 14 |
15JGQ100SCS |
35A 100V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N7043CAT1 |
International Rectifier |
| 15 |
15JGQ100SCX |
35A 100V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N7043CAT1 |
International Rectifier |
| 16 |
16 DIP |
Package Dimensions |
Samsung Electronic |
| 17 |
16 DIP H/S |
Package Dimensions |
Samsung Electronic |
| 18 |
16 SOP |
16SOP Package Dimensions |
Samsung Electronic |
| 19 |
16 ZIP |
Package dimensions |
Samsung Electronic |
| 20 |
16 ZIP |
16ZIP Package Dimensions |
Samsung Electronic |
| 21 |
16CYQ100CSCS |
16A 100V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package DLA Number 1N7070CCT3 |
International Rectifier |
| 22 |
17 ZSIP-H/S |
Package Dimensions |
Samsung Electronic |
| 23 |
171J |
High Voltage Differential FET Amplifier |
Intronics |
| 24 |
18 DIP |
Package Dimensions |
Samsung Electronic |
| 25 |
18 ZIP |
18ZIP Package Dimensions |
Samsung Electronic |
| 26 |
19 ZIP |
Package dimensions |
Samsung Electronic |
| 27 |
19 ZIP |
19ZIP Package Dimensions |
Samsung Electronic |
| 28 |
1N3595 |
Low Leakage Diode |
Microsemi |
| 29 |
1N456 |
25 V, 500 mW low leakage diode |
BKC International Electronics |
| 30 |
1N456 |
Low leakage diode. Working inverse voltage 25V. |
Fairchild Semiconductor |
| | | |
