| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3063 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 2 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 3 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 4 |
1N4009 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 5 |
1N4151 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 6 |
1N4153 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 7 |
1N4154 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 8 |
1N4305 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 9 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
| 10 |
2SC5177-T1 |
High fT, high gain transistor |
NEC |
| 11 |
2SC5177-T2 |
High fT, high gain transistor |
NEC |
| 12 |
2SC5178R |
High fT, high gain transistor |
NEC |
| 13 |
2SC5178R-T1 |
High fT, high gain transistor |
NEC |
| 14 |
2SC5178R-T2 |
High fT, high gain transistor |
NEC |
| 15 |
2SC5180-T1 |
High fT, high gain transistor |
NEC |
| 16 |
2SC5180-T2 |
High fT, high gain transistor |
NEC |
| 17 |
2SC5183R |
High fT, high gain transistor |
NEC |
| 18 |
2SC5183R-T1 |
High fT, high gain transistor |
NEC |
| 19 |
2SC5183R-T2 |
High fT, high gain transistor |
NEC |
| 20 |
2SC5336-T1 |
High-gain transistor |
NEC |
| 21 |
2SC5338-T1 |
High-gain transistor |
NEC |
| 22 |
AC127 |
Germanium N-P-N High-Gain Transistor |
Mullard |
| 23 |
AD650KP |
Voltage-to-frequency and frequency-to-voltage converter, gain tempco ppm/C 100 kHz 150 typ, 1 MHz linearity 0.1% max |
Analog Devices |
| 24 |
ADN2820 |
10.7 Gbps Low Noise, High Gain Transimpedance Amplifier IC with Performance Monitors |
Analog Devices |
| 25 |
ADN2820ACHIPS |
10.7 Gbps Low Noise, High Gain Transimpedance Amplifier IC with Performance Monitor |
Analog Devices |
| 26 |
ADN2821 |
11.1 Gbps 3.3V Low Noise High Gain Transimpedance Amplifier |
Analog Devices |
| 27 |
ADN2821ACHIPS-02K |
11.1 Gbps 3.3V Low Noise High Gain Transimpedance Amplifier |
Analog Devices |
| 28 |
ADN2821ACHIPS-05K |
11.1 Gbps 3.3V Low Noise High Gain Transimpedance Amplifier |
Analog Devices |
| 29 |
ADN2821ACHIPS-10K |
11.1 Gbps 3.3V Low Noise High Gain Transimpedance Amplifier |
Analog Devices |
| 30 |
APPLICATION-NOTE |
4V Gate-Driven Power MOS FET With Low drain to source ON-STATE Resistance Application Note |
NEC |
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