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Datasheets for AIN-

Datasheets found :: 352
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No. Part Name Description Manufacturer
1 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
2 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
3 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
4 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
5 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
6 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
7 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
9 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
10 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
11 2N7002 N-channel transistor. Drain-sourse voltage 60 V. Comchip Technology
12 AD6600AST Dual Channel, Gain-Ranging ADC with RSSI Analog Devices
13 AD6600PCB Dual Channel, Gain-Ranging ADC with RSSI Analog Devices
14 AD6600ST Dual Channel, Gain-Ranging ADC with RSSI Analog Devices
15 AD6600ST/PCB Dual Channel, Gain-Ranging ADC with RSSI Analog Devices
16 BF1012W SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
17 BF166 Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier SGS-ATES
18 BF2000W Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
19 BF998 Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
20 EL2045 Op Amp, 100MHz, Gain-of-2 Stable, Low Power 5.2mA, SR=275V/�s, Dual or Single Supply (36V) Intersil
21 EL2045C Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier Elantec Semiconductor
22 EL2045CN Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier Elantec Semiconductor
23 EL2045CS Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier Elantec Semiconductor
24 EL2045CS-T13 Low-Power 100MHz Gain-of-2 Stable Operational Amplifier Intersil
25 EL2045CS-T7 Low-Power 100MHz Gain-of-2 Stable Operational Amplifier Intersil
26 EL2074 400MHz GBWP Gain-of-2 Stable Operational Amplifier Intersil
27 EL2074C 400MHz GBWP Gain-of-2 Stable Operational Amplifier Elantec Semiconductor
28 EL2074CN 400MHz GBWP Gain-of-2 Stable Operational Amplifier Elantec Semiconductor
29 EL2074CS 400MHz GBWP Gain-of-2 Stable Operational Amplifier Elantec Semiconductor
30 EL2074CS-T13 400MHz GBWP Gain-of-2 Stable Operational Amplifier Elantec Semiconductor


Datasheets found :: 352
Page: | 1 | 2 | 3 | 4 | 5 |



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