No. |
Part Name |
Description |
Manufacturer |
1 |
GM71C18163AJ-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
2 |
GS71108AJ-7 |
128K x 8 1Mb Asynchronous SRAM |
GSI Technology |
3 |
GS71108AJ-7I |
128K x 8 1Mb Asynchronous SRAM |
GSI Technology |
4 |
GS71116AJ-7 |
7ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
5 |
GS71116AJ-7I |
7ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
6 |
GS72108AJ-7 |
7ns 256K x 8 2Mb asynchronous SRAM |
GSI Technology |
7 |
GS72108AJ-7I |
7ns 256K x 8 2Mb asynchronous SRAM |
GSI Technology |
8 |
GS72116AJ-7 |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
9 |
GS72116AJ-7I |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
10 |
GS74104AJ-7 |
7ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
11 |
GS74108AJ-7 |
7ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
12 |
GS74108AJ-7I |
7ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
13 |
GS74116AJ-7 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
14 |
GS74116AJ-7I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
15 |
GS74116AJ-7IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
16 |
GS74116AJ-7T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
17 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
18 |
HM514400AJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
19 |
HM514800AJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
20 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
21 |
HM51S4800AJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
22 |
HY534256AJ-70 |
256K x 4-bit CMOS DRAM, 70ns |
Hynix Semiconductor |
23 |
HY62256AJ-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
24 |
KM416V1004AJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
25 |
NN5118160AJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
26 |
TC514100AJ-70 |
70 ns, 1-bit generation dynamic RAM |
TOSHIBA |
27 |
TC514101AJ-70 |
70 ns, 1-bit generation dynamic RAM |
TOSHIBA |
28 |
TC514400AJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
29 |
TC514402AJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
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