DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for AJ-7

Datasheets found :: 29
Page: | 1 |
No. Part Name Description Manufacturer
1 GM71C18163AJ-7 1,048,576 words x 16 bit DRAM, 70ns LG Semiconductor
2 GS71108AJ-7 128K x 8 1Mb Asynchronous SRAM GSI Technology
3 GS71108AJ-7I 128K x 8 1Mb Asynchronous SRAM GSI Technology
4 GS71116AJ-7 7ns 64K x 16 1Mb asynchronous SRAM GSI Technology
5 GS71116AJ-7I 7ns 64K x 16 1Mb asynchronous SRAM GSI Technology
6 GS72108AJ-7 7ns 256K x 8 2Mb asynchronous SRAM GSI Technology
7 GS72108AJ-7I 7ns 256K x 8 2Mb asynchronous SRAM GSI Technology
8 GS72116AJ-7 128K x 16 2Mb Asynchronous SRAM GSI Technology
9 GS72116AJ-7I 128K x 16 2Mb Asynchronous SRAM GSI Technology
10 GS74104AJ-7 7ns 1M x 4 4Mb asynchronous SRAM GSI Technology
11 GS74108AJ-7 7ns 512K x 8 4Mb asynchronous SRAM GSI Technology
12 GS74108AJ-7I 7ns 512K x 8 4Mb asynchronous SRAM GSI Technology
13 GS74116AJ-7 256K x 16 4Mb Asynchronous SRAM GSI Technology
14 GS74116AJ-7I 256K x 16 4Mb Asynchronous SRAM GSI Technology
15 GS74116AJ-7IT 256K x 16 4Mb Asynchronous SRAM GSI Technology
16 GS74116AJ-7T 256K x 16 4Mb Asynchronous SRAM GSI Technology
17 HM514260AJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
18 HM514400AJ-7 1,048,576-word x 4-bid DRAM, 70ns Hitachi Semiconductor
19 HM514800AJ-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
20 HM51S4260AJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
21 HM51S4800AJ-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
22 HY534256AJ-70 256K x 4-bit CMOS DRAM, 70ns Hynix Semiconductor
23 HY62256AJ-70 32Kx8bit CMOS SRAM, standby current=1mA, 70ns Hynix Semiconductor
24 KM416V1004AJ-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
25 NN5118160AJ-70 CMOS 1M x 16BIT DYNAMIC RAM etc
26 TC514100AJ-70 70 ns, 1-bit generation dynamic RAM TOSHIBA
27 TC514101AJ-70 70 ns, 1-bit generation dynamic RAM TOSHIBA
28 TC514400AJ-70 70 ns, 4-bit generation dynamic RAM TOSHIBA
29 TC514402AJ-70 70 ns, 4-bit generation dynamic RAM TOSHIBA


Datasheets found :: 29
Page: | 1 |



© 2024 - www Datasheet Catalog com