No. |
Part Name |
Description |
Manufacturer |
1 |
1N4001 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 50V. |
Jinan Gude Electronic Device |
2 |
1N4002 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 100V. |
Jinan Gude Electronic Device |
3 |
1N4003 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 200V. |
Jinan Gude Electronic Device |
4 |
1N4004 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 400V. |
Jinan Gude Electronic Device |
5 |
1N4005 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 600V. |
Jinan Gude Electronic Device |
6 |
1N4006 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 800V. |
Jinan Gude Electronic Device |
7 |
1N4007 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 1000V. |
Jinan Gude Electronic Device |
8 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
9 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
10 |
1N5393G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
Jinan Gude Electronic Device |
11 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
12 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
13 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
14 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
15 |
1W010 |
Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
Jinan Gude Electronic Device |
16 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
17 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
18 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
19 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
20 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
21 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
22 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
23 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
24 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
25 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
26 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
27 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
28 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
29 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
30 |
AM100S |
1.0 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. |
Comchip Technology |
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