No. |
Part Name |
Description |
Manufacturer |
1 |
BAL74 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching |
Infineon |
2 |
BAL74 |
High-speed diode |
Nexperia |
3 |
BAL74 |
High-speed diode |
NXP Semiconductors |
4 |
BAL74 |
High-speed diode |
Philips |
5 |
BAL74 |
SOT23 HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
6 |
BAL74W |
High-speed diode |
Philips |
7 |
CMX980AL7 |
Digital radio baseband processor |
MXCOM |
8 |
DM1623-0AL7 |
16 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
9 |
DM1623-1AL7 |
16 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
10 |
DM1623-2AL7 |
16 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
11 |
DM1623-3AL7 |
16 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
12 |
DM1623-7AL7 |
16 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
13 |
DM2023-0AL7 |
20 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
14 |
DM2023-1AL7 |
20 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
15 |
DM2023-7AL7 |
20 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
16 |
DM2423-0AL7 |
24 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
17 |
DM2423-1AL7 |
24 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
18 |
DM2423-7AL7 |
24 characters x 2 line Liquid Crystal Dot Matrix Display Module |
SANYO |
19 |
FDB016N04AL7 |
N-Channel Power Trench MOSFET 40V, 306A, 1.6mOhms |
Fairchild Semiconductor |
20 |
FDB024N04AL7 |
N-Channel Power Trench MOSFET 40V, 219A, 2.4mOhms |
Fairchild Semiconductor |
21 |
HAL700 |
Dual Hall-Effect Sensor with Independent Outputs |
Micronas |
22 |
HAL700SF-E |
Dual Hall-Effect Sensor with Independent Outputs |
Micronas |
23 |
HAL700SF-K |
Dual Hall-Effect Sensor with Independent Outputs |
Micronas |
24 |
HAL710 |
Hall-Effect Sensor with Direction Detection |
Micronas |
25 |
HAL710SF-E |
Hall-Effect Sensor with Direction Detection |
Micronas |
26 |
HAL710SF-K |
Hall-Effect Sensor with Direction Detection |
Micronas |
27 |
M68AF031AL70B1E |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
28 |
M68AF031AL70B1E |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
ST Microelectronics |
29 |
M68AF031AL70B1F |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
30 |
M68AF031AL70B1F |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
ST Microelectronics |
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