Datasheets for ALJ-

Datasheets found :: 35 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	GM71CS18163ALJ-6	1,048,576 words x 16 bit DRAM, 60ns, low power	LG Semiconductor
2	GM71CS18163ALJ-7	1,048,576 words x 16 bit DRAM, 70ns, low power	LG Semiconductor
3	GM71CS18163ALJ-8	1,048,576 words x 16 bit DRAM, 80ns, low power	LG Semiconductor
4	HM514260ALJ-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
5	HM514260ALJ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
6	HM514260ALJ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
7	HM514400ALJ-6	1,048,576-word x 4-bid DRAM, 60ns	Hitachi Semiconductor
8	HM514400ALJ-7	1,048,576-word x 4-bid DRAM, 70ns	Hitachi Semiconductor
9	HM514400ALJ-8	1,048,576-word x 4-bid DRAM, 80ns	Hitachi Semiconductor
10	HM514800ALJ-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
11	HM514800ALJ-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
12	HM51S4260ALJ-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
13	HM51S4260ALJ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
14	HM51S4260ALJ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
15	HM51S4800ALJ-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
16	HM51S4800ALJ-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
17	HY534256ALJ-45	256K x 4-bit CMOS DRAM, 45ns, low power	Hynix Semiconductor
18	HY534256ALJ-50	256K x 4-bit CMOS DRAM, 50ns, low power	Hynix Semiconductor
19	HY534256ALJ-60	256K x 4-bit CMOS DRAM, 60ns, low power	Hynix Semiconductor
20	HY534256ALJ-70	256K x 4-bit CMOS DRAM, 70ns, low power	Hynix Semiconductor
21	HY534256ALJ-80	256K x 4-bit CMOS DRAM, 80ns, low power	Hynix Semiconductor
22	HY62256ALJ-55	32Kx8bit CMOS SRAM, standby current=100uA, 55ns	Hynix Semiconductor
23	HY62256ALJ-70	32Kx8bit CMOS SRAM, standby current=100uA, 70ns	Hynix Semiconductor
24	HY62256ALJ-85	32Kx8bit CMOS SRAM, standby current=100uA, 85ns	Hynix Semiconductor
25	HY62256ALJ-I	32Kx8bit CMOS SRAM	Hynix Semiconductor
26	HY62256ALJ-I-55	32Kx8bit CMOS SRAM, standby current=100uA, 55ns	Hynix Semiconductor
27	HY62256ALJ-I-70	32Kx8bit CMOS SRAM, standby current=100uA, 70ns	Hynix Semiconductor
28	HY62256ALJ-I-85	32Kx8bit CMOS SRAM, standby current=100uA, 85ns	Hynix Semiconductor
29	KM75C104ALJ-20	20 ns, 5 V, CMOS FIFO with programmable flag	Samsung Electronic
30	KM75C104ALJ-25	25 ns, 5 V, CMOS FIFO with programmable flag	Samsung Electronic

Datasheets found :: 35 Page: | 1 | 2 |