No. |
Part Name |
Description |
Manufacturer |
1 |
03P4MGC |
P-gate all diffused MOLD type thyristor |
NEC |
2 |
03P5MGC |
P-gate all diffused MOLD type thyristor |
NEC |
3 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
4 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
5 |
042 AHH-ELB |
Aluminum Capacitors, Axial, Smallest Diameter |
Vishay |
6 |
043 AHH-ELB |
Aluminum Capacitors, Axial, Smallest Diameter |
Vishay |
7 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
8 |
0912-25 |
25 W, 50 V internally matched, common base transistor |
Acrian |
9 |
0912-25-2 |
25 W, 50 V internally matched, common base transistor |
Acrian |
10 |
0912-25-3 |
25 W, 50 V internally matched, common base transistor |
Acrian |
11 |
0912-45 |
45 W, 50 V internally matched, common base transistor |
Acrian |
12 |
0912-45-2 |
45 W, 50 V internally matched, common base transistor |
Acrian |
13 |
0912-45-3 |
45 W, 50 V internally matched, common base transistor |
Acrian |
14 |
0912-7 |
7 W, 50 V internally matched, common base transistor |
Acrian |
15 |
0912-7-2 |
7 W, 50 V internally matched, common base transistor |
Acrian |
16 |
0912-7-3 |
7 W, 50 V internally matched, common base transistor |
Acrian |
17 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
18 |
10696 |
Parallel Processing System |
Conexant |
19 |
117 ASD |
Aluminum Capacitors, Axial, Smallest Diameter |
Vishay |
20 |
1191 |
Ultra-Low-Power, 7.5Msps, Dual 8-Bit ADC |
MAXIM - Dallas Semiconductor |
21 |
12C887 |
Real Time Clock |
MAXIM - Dallas Semiconductor |
22 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
23 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
24 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
25 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
26 |
1313 |
Metallized Polyester |
Electronic Film Capacitors |
27 |
138D |
Wet Tantalum Capacitors, Electrolyte Sintered Anode, Hermetically-Sealed with True Glass-to-Tantalum Seal |
Vishay |
28 |
138D106X0025C2 |
Wet Tantalum Capacitors Sintered Anode TANTALEX Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal |
Vishay |
29 |
138D107X0010F2 |
Wet Tantalum Capacitors Sintered Anode TANTALEX Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal |
Vishay |
30 |
138D107X0025F2 |
Wet Tantalum Capacitors Sintered Anode TANTALEX Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal |
Vishay |
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