No. |
Part Name |
Description |
Manufacturer |
1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
3 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
4 |
1313 |
Metallized Polyester |
Electronic Film Capacitors |
5 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
6 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
7 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
8 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
9 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
10 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
11 |
1N3113 |
Gallium Arsenide Tunnel Diode |
Motorola |
12 |
1N3114 |
Gallium Arsenide Tunnel Diode |
Motorola |
13 |
1N3115 |
Gallium Arsenide Tunnel Diode |
Motorola |
14 |
1N3116 |
Gallium Arsenide Tunnel Diode |
Motorola |
15 |
1N3117 |
Gallium Arsenide Tunnel Diode |
Motorola |
16 |
1N3118 |
Gallium Arsenide Tunnel Diode |
Motorola |
17 |
1N3119 |
Gallium Arsenide Tunnel Diode |
Motorola |
18 |
1N3120 |
Gallium Arsenide Tunnel Diode |
Motorola |
19 |
1N3138 |
Gallium Arsenide Tunnel Diode |
Motorola |
20 |
26LS31 |
QuadHighSpeedDifferentialLineDriver |
National Semiconductor |
21 |
26LS31 |
QUADRUPLEDIFFERENTIALLINEDRIVER |
Texas Instruments |
22 |
26LS32 |
QUADRUPLEDIFFERENTIALLINERECEIVERS |
Texas Instruments |
23 |
2SK649 |
Gallium Arsenide Devices |
Panasonic |
24 |
2SK653 |
Gallium Arsenide Devices |
Panasonic |
25 |
2SK690 |
Gallium Arsenide Devices |
Panasonic |
26 |
30CLJQ045SCS |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Metallic Lid SMD-0.5 package DLA Number 1N7064CCU3 |
International Rectifier |
27 |
3SK0183 |
Gallium Arsenide Devices |
Panasonic |
28 |
3SK0184 |
Gallium Arsenide Devices |
Panasonic |
29 |
3SK0241 |
Gallium Arsenide Devices |
Panasonic |
30 |
3SK0272 |
Gallium Arsenide Devices |
Panasonic |
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