Datasheets for ALZ

Datasheets found :: 19 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	ALZ10	Germanium PNP junction RF power transistor	TELEFUNKEN
2	FDD1600N10ALZ	N-Channel PowerTrench� MOSFET 100V, 6.8A, 160m?	Fairchild Semiconductor
3	FDD1600N10ALZD	BoostPak (N-Channel PowerTrench� MOSFET + Diode) 100 V, 6.8 A, 160 m?	Fairchild Semiconductor
4	FDD390N15ALZ	N-Channel PowerTrench� MOSFET 150V, 26A, 42m?	Fairchild Semiconductor
5	FDT1600N10ALZ	N-Channel PowerTrench� MOSFET 100V, 5.6A, 160m?	Fairchild Semiconductor
6	FM93C46ALZ	1K-Bit Serial CMOS EEPROM	Fairchild Semiconductor
7	FM93C56ALZ	2K-Bit Serial CMOS EEPROM	Fairchild Semiconductor
8	FM93C86ALZ	16K-Bit Serial CMOS EEPROM	Fairchild Semiconductor
9	HM514260ALZ-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
10	HM514260ALZ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
11	HM514260ALZ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
12	HM514400ALZ-6	1,048,576-word x 4-bid DRAM, 60ns	Hitachi Semiconductor
13	HM514400ALZ-7	1,048,576-word x 4-bid DRAM, 70ns	Hitachi Semiconductor
14	HM514400ALZ-8	1,048,576-word x 4-bid DRAM, 80ns	Hitachi Semiconductor
15	HM514800ALZ-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
16	HM514800ALZ-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
17	HM51S4260ALZ-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
18	HM51S4260ALZ-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
19	HM51S4260ALZ-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor

Datasheets found :: 19 Page: | 1 |