No. |
Part Name |
Description |
Manufacturer |
1 |
10AM20 |
CW Class A/AB ≤ 1 Ghz |
Microsemi |
2 |
10AM20 |
TRANS GP BJT 50V 5.5A 3(55AT) |
New Jersey Semiconductor |
3 |
AM2009 |
Six channel MOS multiplex switches |
National Semiconductor |
4 |
AM2009C |
Six channel MOS multiplex switches |
National Semiconductor |
5 |
AM2009CD |
Six channel MOS multiplex switches |
National Semiconductor |
6 |
AM2009CF |
Six channel MOS multiplex switches |
National Semiconductor |
7 |
AM2009D |
Six channel MOS multiplex switches |
National Semiconductor |
8 |
AM2009F |
Six channel MOS multiplex switches |
National Semiconductor |
9 |
AM2023-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
10 |
AM2023-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
11 |
AM2023-006 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
12 |
APTMC120AM20CT1AG |
Phase Leg SiC MOSFET Module |
Microsemi |
13 |
BAM20 |
20 WATTS - 27 VOLTS 100-160 MHz |
Acrian |
14 |
FSAM20SH60A |
20A, Smart Power Module (SPM) |
Fairchild Semiconductor |
15 |
FSAM20SL60 |
SPM TM (Smart Power Module) |
Fairchild Semiconductor |
16 |
FSAM20SM60A |
20A, Smart Power Module (SPM) |
Fairchild Semiconductor |
17 |
RBE1VAM20A |
Schottky Barrier Diode |
ROHM |
18 |
RBE1VAM20ATR |
Schottky Barrier Diode |
ROHM |
19 |
RBE2VAM20A |
Schottky Barrier Diode |
ROHM |
20 |
RBE2VAM20ATR |
Schottky Barrier Diode |
ROHM |
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