| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AM457 |
Precision amplifier for bridge circuits |
Analog Microelectronics |
| 2 |
AM45DL3208G |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
Advanced Micro Devices |
| 3 |
AM45DL32X8G |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
Advanced Micro Devices |
| 4 |
AM45DL6408G |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
Advanced Micro Devices |
| 5 |
APTC60AM45B1G |
Phase Leg + PFC |
Microsemi |
| 6 |
APTC60AM45BC1G |
Phase Leg + PFC |
Microsemi |
| 7 |
APTC60AM45T1G |
Phase Leg |
Microsemi |
| 8 |
APTC60DDAM45CT1G |
Dual Boost Chopper |
Microsemi |
| 9 |
APTC60DDAM45T1G |
Dual Boost Chopper |
Microsemi |
| 10 |
APTC60VDAM45T1G |
Interleaved PFC |
Microsemi |
| 11 |
NX8567SAM453-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1545.322 nm. Frequency 194.00 THz. FC-UPC connector. |
NEC |
| 12 |
NX8567SAM453-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1545.322 nm. Frequency 194.00 THz. SC-UPC connector. |
NEC |
| 13 |
NX8567SAM457-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1545.720 nm. Frequency 193.95 THz. FC-UPC connector. |
NEC |
| 14 |
NX8567SAM457-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1545.720 nm. Frequency 193.95 THz. SC-UPC connector. |
NEC |
| 15 |
SAM45 |
Si multiple diode |
RFT |
| | | |
