| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 2 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 3 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 4 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 5 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 6 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 7 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 8 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 9 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 10 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 11 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 12 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 13 |
2N3866 |
Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages |
AEG-TELEFUNKEN |
| 14 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 15 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 16 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 17 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 18 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 19 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 20 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 21 |
2N4427 |
Silicon NPN epitaxial planar transistor for input stages and driver stages in VHF amplifier circuits |
AEG-TELEFUNKEN |
| 22 |
2SA1837 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 23 |
2SA1899 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 24 |
2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 25 |
2SA1932 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 26 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 27 |
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 28 |
2SC5174 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 29 |
2SD1994 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency power amplification and drive, Complementary pair with 2SB1322 and 2SB1322A |
Panasonic |
| 30 |
5962-87766012A |
Hex 2-Input NAND Drivers |
Texas Instruments |
| | | |
