No. |
Part Name |
Description |
Manufacturer |
1 |
AD7891AP-1 |
LC2MOS 8-Channel, 12-Bit High Speed Data Acquisition System |
Analog Devices |
2 |
CXK581000AP-10LL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
3 |
CXK581000AP-10SL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
4 |
CXK581000ATM/AYM/AM/AP-10LL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
5 |
CXK581000ATM/AYM/AM/AP-10SL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
6 |
CXK58257AP-10L |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
7 |
CXK58257AP-10LL |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
8 |
CXK58257AP-12L |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
9 |
CXK58257AP-12LL |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
10 |
DS2401AP-103-001+T |
Silicon Serial Number |
MAXIM - Dallas Semiconductor |
11 |
HM4716AP-1 |
16384-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
12 |
HM472114AP-1 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
13 |
HM4864AP-12 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
14 |
HM4864AP-15 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
15 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
16 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
17 |
HM62256AP-10 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
18 |
HM62256AP-12 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
19 |
HM62256AP-15 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
20 |
HM6264AP-10 |
8192-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
21 |
HM6264AP-12 |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
22 |
HM6264AP-15 |
8192-word x 8-bit high speed CMOS static RAM, 150ns |
Hitachi Semiconductor |
23 |
HN27C256AP-12 |
256K(32K x 8-bit) UV and OTP EPROM |
Hitachi Semiconductor |
24 |
HN27C256AP-15 |
256K(32K x 8-bit) UV and OTP EPROM |
Hitachi Semiconductor |
25 |
HN58C256AP-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
26 |
HN58C256AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
27 |
HN58V65AP-10 |
64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A) |
Hitachi Semiconductor |
28 |
HN58V65AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
29 |
HN58V65AP-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
30 |
HN58V66AP-10 |
64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A) |
Hitachi Semiconductor |
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