| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CXK58257AP-12L |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
| 2 |
CXK58257AP-12LL |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
| 3 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 4 |
HM62256AP-12 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 5 |
HM6264AP-12 |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
| 6 |
HN27C256AP-12 |
256K(32K x 8-bit) UV and OTP EPROM |
Hitachi Semiconductor |
| 7 |
HY29F040AP-12 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 8 |
HY29F040AP-12E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 9 |
HY29F040AP-12I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 10 |
JQ1AP-12V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 11 |
KM41256AP-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
| 12 |
KM41464AP-12 |
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
Samsung Electronic |
| 13 |
TMM2063AP-12 |
120ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
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