| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AD7891AP-2 |
LC2MOS 8-Channel, 12-Bit High Speed Data Acquisition System |
Analog Devices |
| 2 |
AP-2-1 |
Microwave 1.9-2.1 GHz Power Amplifier |
CCSIT-CE |
| 3 |
CAT28C16AP-20 |
16K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
| 4 |
CAT28C16AP-20T |
16K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
| 5 |
HM4716AP-2 |
16384-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 6 |
HM472114AP-2 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
| 7 |
HM4864AP-20 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 8 |
ILC6370AP-25 |
SOT-89 STEP UP SWITCHING REGULATOR WITH SHUTDOWN |
Impala Linear Corporation |
| 9 |
ILC6371AP-25 |
SOT-89 STEP UP SWITCHING REGULATOR WITH SHUTDOWN |
Impala Linear Corporation |
| 10 |
ILC6380AP-25 |
SOT-89 STEP-UP DUAL-MODE SWITCHER WITH SHUTDOWN |
Impala Linear Corporation |
| 11 |
ILC6381AP-25 |
2.5V Step-up dual-mode switcher with shutdown |
Impala Linear Corporation |
| 12 |
JQ1AP-24V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 13 |
KM75C104AP-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 14 |
KM75C104AP-25 |
25 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 15 |
M5M82C59AP-2 |
The M5M82C59AP,-2 is programmable LSI Interupt control |
Mitsubishi Electric Corporation |
| 16 |
MB89P133AP-201 |
8-bit Proprietary Microcontroller |
Fujitsu Microelectronics |
| 17 |
MB89P195AP-201 |
8-bit Proprietary Microcontroller |
Fujitsu Microelectronics |
| 18 |
MK4118AP-2 |
1Kx8-bit static RAM, 150ns acces time, 150ns cycle time. |
Mostek |
| 19 |
MK4801AP-2 |
1K x 8-bit static RAM, 150ns |
Mostek |
| 20 |
MRF1.6/5.6-AP-2.5C |
RFCO-AXIAL CONNECTORS(MODEL IEC169-13 1.6/5.6 COAXIAL CONNECTORS) |
Hirose Electric |
| 21 |
TC5516AP-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 22 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 23 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 24 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 25 |
TMP8085AP-2 |
8-Bit Microprocessor |
TOSHIBA |
| 26 |
TMP82C51AP-2 |
PROGRAMMABLE COMMUNICATION INTERFACE |
TOSHIBA |
| 27 |
TMP82C55AP-2 |
CMOS PROGRAMMABLE PERIPHERAL INTERFACE |
TOSHIBA |
| 28 |
TMP82C59AP-2 |
PROGRAMMABLE INTERRUPT CONTROLLER |
TOSHIBA |
| | | |
