No. |
Part Name |
Description |
Manufacturer |
1 |
AP-752 |
AP-752 The Advantages of Using the 82371SB PCI ISA IDE Xcelerator (PIIX3) with the Intel 430HX PCIset in Embedded Designs |
Intel |
2 |
AP-752 |
AP-752 The Advantages of Using the 82371SB PCI ISA IDE Xcelerator (PIIX3) with the Intel 430HX PCIset in Embedded Designs |
Intel |
3 |
CXK581000AP-70LL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
4 |
CXK581000AP-70SL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
5 |
CXK581000ATM/AYM/AM/AP-70LL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
6 |
CXK581000ATM/AYM/AM/AP-70SL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
7 |
CXK58257AP-70L |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
8 |
CXK58257AP-70LL |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
9 |
HM4816AP-7 |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
10 |
HM514258AP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
11 |
HY29F040AP-70 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
12 |
HY29F040AP-70E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
13 |
HY29F040AP-70I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
14 |
HY62256AP-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
15 |
TC514100AP-70 |
70 ns, 1-bit generation dynamic RAM |
TOSHIBA |
16 |
TC514101AP-70 |
70 ns, 1-bit generation dynamic RAM |
TOSHIBA |
17 |
TC514400AP-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
18 |
TC514402AP-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
19 |
TC514410AP-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
20 |
TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
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