| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28C256API-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 2 |
28C256API-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 3 |
28C256API-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 4 |
28C256API-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5 |
28C256API-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 6 |
28C256API-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 7 |
28C256API-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 8 |
28C256API-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 9 |
CAT28C16API-20 |
16K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
| 10 |
CAT28C16API-20T |
16K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
| 11 |
CAT33C804API-TE13 |
4K-Bit Secure Access Serial E2PROM |
Catalyst Semiconductor |
| 12 |
CAT35C804API-TE13 |
4K-bit secure access serial EEPROM |
Catalyst Semiconductor |
| 13 |
CS18LV02565API-55 |
HIGH SPEED SUPER LOW POWER SRAM |
etc |
| 14 |
CS18LV02565API-70 |
HIGH SPEED SUPER LOW POWER SRAM |
etc |
| 15 |
CTS9513API-2 |
5 Chan 16 bit 20MHz Counter/Timer |
etc |
| 16 |
HN58V65API-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 17 |
HN58V65API-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 18 |
HN58V66API-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 19 |
HN58V66API-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 20 |
KM75C104API-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 21 |
KM75C104API-25 |
25 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 22 |
KM75C104API-35 |
35 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 23 |
KM75C104API-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 24 |
MX27C1000API-10 |
1M-BIT [128K x 8] CMOS EPROM |
Macronix International |
| 25 |
MX27C1000API-12 |
1M-BIT [128K x 8] CMOS EPROM |
Macronix International |
| 26 |
MX27C1000API-15 |
1M-BIT [128K x 8] CMOS EPROM |
Macronix International |
| 27 |
MX27C1000API-90 |
1M-BIT [128K x 8] CMOS EPROM |
Macronix International |
| 28 |
MX27C2000API-10 |
2M-BIT [256K x 8] CMOS EPROM |
Macronix International |
| 29 |
MX27C2000API-12 |
2M-BIT [256K x 8] CMOS EPROM |
Macronix International |
| 30 |
MX27C2000API-15 |
2M-BIT [256K x 8] CMOS EPROM |
Macronix International |
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