| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3604 |
Silicon planar switching diodes in a glass package |
Siemens |
| 2 |
1N4009 |
Silicon planar switching diode in miniature design |
Siemens |
| 3 |
1N4148 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 4 |
1N4148 |
Silicon planar switching diode in a glass case |
Siemens |
| 5 |
1N4149 |
Silicon Epitaxial Planar Switching Diode |
ITT Semiconductors |
| 6 |
1N4151 |
Silicon epitaxial planar switching diode. Electrically it resembles the 1N3604 |
AEG-TELEFUNKEN |
| 7 |
1N4151 |
Silicon Epitaxial Planar Small Capacity Diode |
Mikroelektronikai Vallalat |
| 8 |
1N4154 |
Silicon epitaxial planar switching diode. Electrically the diode resembles 1N4009 |
AEG-TELEFUNKEN |
| 9 |
1N4154 |
Silicon Epitaxial Planar Small Capacity Diode |
Mikroelektronikai Vallalat |
| 10 |
1N5722 |
N-P-N PLANAR SILICON PHOTOTRANSISTORS |
Texas Instruments |
| 11 |
1N5723 |
N-P-N PLANAR SILICON PHOTOTRANSISTORS |
Texas Instruments |
| 12 |
1N5724 |
N-P-N PLANAR SILICON PHOTOTRANSISTORS |
Texas Instruments |
| 13 |
1N5725 |
N-P-N PLANAR SILICON PHOTOTRANSISTORS |
Texas Instruments |
| 14 |
1S1549 |
Silicon epitaxial planar schottky barrier mixer diode |
TOSHIBA |
| 15 |
1SS378 |
Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 16 |
2CK120 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 17 |
2CK48 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 18 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 19 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 20 |
2N1420 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 21 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 22 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 23 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 24 |
2N1711 |
Silicon NPN Planar Switching Transistor |
TELEFUNKEN |
| 25 |
2N1893 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 26 |
2N1983 |
NPN silicon annular small-signal transistor |
Motorola |
| 27 |
2N1984 |
NPN silicon annular small-signal transistor |
Motorola |
| 28 |
2N2060 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 29 |
2N2060A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 30 |
2N2193 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| | | |
