No. |
Part Name |
Description |
Manufacturer |
1 |
10941 |
Alphanumeric and Bargraph Display Controller |
Rockwell |
2 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
3 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
4 |
13PD100-TO |
The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... |
Anadigics Inc |
5 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
6 |
1MBI150SH-140 |
Tentative target specification |
Fuji Electric |
7 |
2N3137 |
NPN silicon transistor for large signal VHF and UHF applications |
Motorola |
8 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
9 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
10 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
11 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
12 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
13 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
14 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
15 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
16 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
17 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
18 |
2SB1168 |
PNP Epitaxial Planar Silicon Transistors Large Current Switching Applications |
SANYO |
19 |
2SB808 |
Low-Voltage Large-Current Amp Applications |
SANYO |
20 |
2SB816 |
PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
21 |
2SB892 |
PNP Epitaxial Planar Silicon Darlington Transistors Large-Current Switching Applications |
SANYO |
22 |
2SB893 |
PNP Epitaxial Planar Silicon Transistor Large-Current Driving Applications |
SANYO |
23 |
2SB926 |
PNP Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
24 |
2SB927 |
PNP Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
25 |
2SB985 |
PNP Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
26 |
2SC5351 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY. |
TOSHIBA |
27 |
2SD1012 |
NPN Epitaxial Planar Silicon Transistors Low-Voltage Large-Current Amplifier Applications |
SANYO |
28 |
2SD1046 |
NPN Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
29 |
2SD1207 |
NPN Epitaxial Planar Silicon Darlington Transistors Large-Current Switching Applications |
SANYO |
30 |
2SD1246 |
NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
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