| No. |
Part Name |
Description |
Manufacturer |
| 1 |
4E100M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 2 |
4E100M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 3 |
4E200M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 4 |
4E200M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 5 |
4E20M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 6 |
4E20M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 7 |
4E30M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 8 |
4E30M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 9 |
4E40M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 10 |
4E40M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 11 |
4E50M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 12 |
4E50M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 13 |
4E80M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 14 |
4E80M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 15 |
K2EB-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 16 |
K2EBP-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 17 |
K4EB-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 18 |
K4EBP-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| | | |
