| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AT002S3-11 |
GaAs 35 dB IC Voltage Variable Single Control Attenuator 0.4�2.5 GHz |
Alpha Industries Inc |
| 2 |
AT004N3-11 |
GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC�4 GHz |
Alpha Industries Inc |
| 3 |
AT006N3-00 |
GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC�6 GHz |
Alpha Industries Inc |
| 4 |
AT006N3-01 |
GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC�6 GHz |
Alpha Industries Inc |
| 5 |
AT006N3-10 |
GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC�6 GHz |
Alpha Industries Inc |
| 6 |
AT006N3-93 |
GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC�8 GHz |
Alpha Industries Inc |
| 7 |
BGY58A |
Hybrid amplifier module for use as 34dB line extender in CATV systems operating at frequencies up to 330MHz |
Philips |
| 8 |
BGY78 |
Hybrid amplifier module for use as 34dB line extender in CATV systems operating at frequencies up to 450MHz |
Philips |
| 9 |
EDE1104AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
| 10 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
| 11 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
| 12 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
| 13 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
| 14 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
| 15 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
| 16 |
EDE1108AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
| 17 |
HA-4905 |
Comparator, Analog, Precision, Voffset 10mV, Ioffset 70nA, Ibias 300nA, Quad |
Intersil |
| 18 |
TC110 |
The TC110 is a step-up (Boost) switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency of 84%. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches |
Microchip |
| 19 |
TC110301ECTTR |
The TC110 is a step-up (Boost) switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency ... |
Microchip |
| 20 |
TC110303ECTTR |
The TC110 is a step-up (Boost) switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency ... |
Microchip |
| 21 |
TC110331ECTTR |
The TC110 is a step-up (Boost) switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency ... |
Microchip |
| 22 |
TC110333ECTTR |
The TC110 is a step-up (Boost) switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency ... |
Microchip |
| 23 |
TC110501ECTTR |
The TC110 is a step-up (Boost) switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency ... |
Microchip |
| 24 |
TC110503ECTTR |
The TC110 is a step-up (Boost) switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency ... |
Microchip |
| 25 |
W24LH8 |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
| 26 |
W24LH8Q-55LE |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
| 27 |
W24LH8Q-55LI |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
| 28 |
W24LH8S-55LE |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
| 29 |
W24LH8S-55LI |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
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