No. |
Part Name |
Description |
Manufacturer |
1 |
15040-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 75VDC |
NTE Electronics |
2 |
15041-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 90VDC |
NTE Electronics |
3 |
15042-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 110VDC |
NTE Electronics |
4 |
15043-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 145VDC |
NTE Electronics |
5 |
15044-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 230VDC |
NTE Electronics |
6 |
15045-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 300VDC |
NTE Electronics |
7 |
15046-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 350VDC |
NTE Electronics |
8 |
15047-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 470VDC |
NTE Electronics |
9 |
15048-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 600VDC |
NTE Electronics |
10 |
15049AC |
Surge arrester (gas filled). Nominal breakdown voltage 120VAC. |
NTE Electronics |
11 |
15050AC |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC. |
NTE Electronics |
12 |
GSR HERMETIC RESISTORS |
Commercial Hermetic Resistors, Excellent Long-Term Stability, Impervious to Harmful Environments, Inert Gas Filled |
Vishay |
13 |
MAX3507EGI |
Upstream CATV Amplifier with On-Chip Anti-Alias Filter |
MAXIM - Dallas Semiconductor |
14 |
MRF966 |
N-Channel Dual-Gate GaAs Field-Effect Transistor |
Motorola |
15 |
MRFC966 |
N-Channel Dual-Gate GaAs Field-Effect Transistor |
Motorola |
16 |
NTE15040-ECG |
Surge Arresters (Gas Filled) |
NTE Electronics |
17 |
NTE15048-ECG |
Surge Arresters (Gas Filled) |
NTE Electronics |
18 |
NTE15049AC |
Surge Arresters (Gas Filled) |
NTE Electronics |
19 |
NTE15050AC |
Surge Arresters (Gas Filled) |
NTE Electronics |
20 |
RNR/RNN RESISTORS (MIL-PRF-55182) |
Established Reliability ""S"" Level, MIL-PRF-55182, Characteristics E and C, Excellent long-term stability, Impervious to harmful environments, Inert gas filled, Low noise |
Vishay |
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