| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SB1149 |
Suitable for use to operate from IC without Predriver, such as hammer driver |
NEC |
| 2 |
2SK2685 |
GaAs HEMT |
Hitachi Semiconductor |
| 3 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 4 |
AN120 |
Application of Xicor Digitally Controlled Potentiometers (XDCP) as Hybrid Analog/Digital Feedback System Control Elements |
Xicor |
| 5 |
BA01202 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 6 |
BA01203 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 7 |
BA01207 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 8 |
BAW24 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 9 |
BAW25 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 10 |
BAW26 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 11 |
BAW27 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 12 |
BSW11 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits |
AEG-TELEFUNKEN |
| 13 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
| 14 |
C3704-02 |
INputV: 5Vdc; max current: 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
Hamamatsu Corporation |
| 15 |
C3704-03 |
INputV: 6-9Vdc; max current: 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
Hamamatsu Corporation |
| 16 |
CFH77 |
GaAs HEMT for low noise front end amp... |
Infineon |
| 17 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 18 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 19 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 20 |
CGA-6618 |
DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER |
Stanford Microdevices |
| 21 |
CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 22 |
CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 23 |
CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 24 |
CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 25 |
CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 26 |
CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 27 |
CGD987HCI |
1 GHz, 27 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 28 |
E702360_SH7058 |
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. |
Renesas |
| 29 |
GMV7821-000 |
GaAs Hyperabrupt Junction Varactor Diodes |
Skyworks Solutions |
| 30 |
GMV9801-000 |
GaAs Hyperabrupt Junction Varactor Diodes |
Skyworks Solutions |
| | | |
