| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3SK121 |
GaAs N-Channel Dual gate MES type |
TOSHIBA |
| 2 |
3SK147 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 3 |
3SK148 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 4 |
3SK149 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 5 |
3SK165 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 6 |
3SK165A |
GaAs N-channel Dual Gate MES FET |
SONY |
| 7 |
3SK165A-0 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 8 |
3SK165A-1 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 9 |
3SK166 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 10 |
3SK166A |
GaAs N-channel Dual Gate MES FET |
SONY |
| 11 |
3SK166A-0 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 12 |
3SK166A-2 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 13 |
3SK240 |
Field Effect Transistor GaAs N-Channel Dual Gate MES Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
| 14 |
3SK309 |
GaAs N Channel Dual Gate MES FET UHF RF Amplifier |
Hitachi Semiconductor |
| 15 |
B SMD |
Marking for NE71084 part number, 84-SL/84A-SL/84S/83AS NEC package |
NEC |
| 16 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 17 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 18 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 19 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 20 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 21 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 22 |
E SMD |
Marking for NE76084 part number, 84-SL/84A-SL/84S/83AS NEC package |
NEC |
| 23 |
FDMS8670AS |
FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mOhms |
Fairchild Semiconductor |
| 24 |
GN1010 |
GaAs N-Channel MES IC |
Panasonic |
| 25 |
GN1021 |
GaAs N Channel MES Type IC |
Matsushita Electric Works(Nais) |
| 26 |
GN1022 |
GaAs N Channel MES Type IC |
Matsushita Electric Works(Nais) |
| 27 |
J SMD |
Marking for NE76184A part number, 84-SL/84A-SL/84S/83AS NEC package |
NEC |
| 28 |
LMV111 |
Operational Amplifier with Bias Network |
National Semiconductor |
| 29 |
LMV111M5 |
Operational Amplifier with Bias Network |
National Semiconductor |
| 30 |
LMV111M5X |
Operational Amplifier with Bias Network |
National Semiconductor |
| | | |
