Datasheets for AS-8

Datasheets found :: 20 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	AEAS-84AD-LBSC0	AEAS-84AD-LBSC0 · Multi-Turn Absolute Encoder Module, 12-bit	Agilent (Hewlett-Packard)
2	AEAS-84AD-LBSC0	AEAS-84AD-LBSC0 · Multi-Turn Absolute Encoder Module, 12-bit	Agilent (Hewlett-Packard)
3	AEAS-84AD-LBSF0	AEAS-84AD-LBSF0 · Multi-Turn Absolute Encoder Module, 14 bit	Agilent (Hewlett-Packard)
4	AEAS-84AD-LBSF0	AEAS-84AD-LBSF0 · Multi-Turn Absolute Encoder Module, 14 bit	Agilent (Hewlett-Packard)
5	BCR08AS-8	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V	Mitsubishi Electric Corporation
6	BCR08AS-8	MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE	Mitsubishi Electric Corporation
7	BCR08AS-8	LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE	Powerex Power Semiconductors
8	BCR3AS-8	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V	Mitsubishi Electric Corporation
9	BCR5AS-8	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V	Mitsubishi Electric Corporation
10	BCR5AS-8L	Surface Mount Triac 5 Amperes/400-600 Volts	Powerex Power Semiconductors
11	CR05AS-8	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V	Mitsubishi Electric Corporation
12	CR08AS-8	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V	Mitsubishi Electric Corporation
13	CR5AS-8	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V	Mitsubishi Electric Corporation
14	CT20AS-8	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE	Mitsubishi Electric Corporation
15	CT25AS-8	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE	Mitsubishi Electric Corporation
16	CT25AS-8	STROBE FLASHER USE	Powerex Power Semiconductors
17	HM514400AS-8	1,048,576-word x 4-bid DRAM, 80ns	Hitachi Semiconductor
18	HY534256AS-80	256K x 4-bit CMOS DRAM, 80ns	Hynix Semiconductor
19	LC35256AS-85	256 K (32768 words x 8 bit) SRAM with OE and CE pins	SANYO
20	LP61L1008AS-8	128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM	AMIC Technology

Datasheets found :: 20 Page: | 1 |