| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BAS52 |
Silicon Schottky Diode |
Infineon |
| 2 |
BAS52-02V |
Schottky Diodes - Low current rectification and high speed switching Schottky diode |
Infineon |
| 3 |
BAS521 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 4 |
BAS521 |
Single high-voltage switching diode |
Nexperia |
| 5 |
BAS521 |
Single high-voltage switching diode |
NXP Semiconductors |
| 6 |
BAS521 |
BAS521; High voltage switching diode |
Philips |
| 7 |
BAS521 |
BAS521; High voltage switching diode |
Philips |
| 8 |
BAS521 |
High voltage switching diode |
Philips |
| 9 |
BAS521-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 10 |
BAS521-HF |
Halogen Free Switching Diodes, VRRM=300V, VR=300V, PD=500mW, IF=250mA |
Comchip Technology |
| 11 |
BAS521B |
High-voltage switching diode |
Nexperia |
| 12 |
BAS521LP |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 13 |
BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 14 |
NLAS5213 |
Analog Switches, DPST and Dual SPST, 1 Ohm RON |
ON Semiconductor |
| 15 |
NLAS5223 |
Analog Switch, Dual SPDT, Ultra−Low, 0.5 Ohm |
ON Semiconductor |
| 16 |
NLAS52231 |
Analog Switch, Dual SPDT, Ultra-Low Ron, 0.4 Ω |
ON Semiconductor |
| 17 |
NLAS5223B |
Analog Switch, Dual SPDT, Ultra−Low 0.5 Ohm |
ON Semiconductor |
| 18 |
NLAS5223C |
Dual SPDT Analog Switch |
ON Semiconductor |
| 19 |
NX8563LAS525-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. SC-UPC. |
NEC |
| 20 |
NX8563LAS525-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. SC-APC. |
NEC |
| 21 |
NX8567SAS521-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1552.122 nm. Frequency 193.15 THz. FC-UPC connector. |
NEC |
| 22 |
NX8567SAS521-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1552.122 nm. Frequency 193.15 THz. SC-UPC connector. |
NEC |
| 23 |
NX8567SAS525-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1552.524 nm. Frequency 193.10 THz. FC-UPC connector. |
NEC |
| 24 |
NX8567SAS525-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1552.524 nm. Frequency 193.10 THz. SC-UPC connector. |
NEC |
| 25 |
NX8567SAS529-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1552.926 nm. Frequency 193.05 THz. FC-UPC connector. |
NEC |
| 26 |
NX8567SAS529-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1552.926 nm. Frequency 193.05 THz. SC-UPC connector. |
NEC |
| 27 |
TAS5261 |
315-W Mono Digital Amplifier Power Stage |
Texas Instruments |
| 28 |
TAS5261DKD |
315-W Mono Digital Amplifier Power Stage 36-HSSOP 0 to 70 |
Texas Instruments |
| 29 |
TAS5261DKDG4 |
315-W Mono Digital Amplifier Power Stage 36-HSSOP 0 to 70 |
Texas Instruments |
| 30 |
TAS5261DKDR |
315-W Mono Digital Amplifier Power Stage 36-HSSOP 0 to 70 |
Texas Instruments |
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