No. |
Part Name |
Description |
Manufacturer |
1 |
2W005 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
2 |
2W01 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
3 |
2W02 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
4 |
2W04 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
5 |
2W06 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
6 |
2W08 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
7 |
2W10 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
8 |
B125C5000 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
9 |
B250C5000 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
10 |
B380C5000 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
11 |
B40C5000 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
12 |
B80C5000 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
13 |
BD201 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. |
General Electric Solid State |
14 |
BD201 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
General Semiconductor |
15 |
BD202 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. |
General Electric Solid State |
16 |
BD202 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
General Semiconductor |
17 |
BD203 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. |
General Electric Solid State |
18 |
BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
General Semiconductor |
19 |
BD204 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. |
General Electric Solid State |
20 |
BD204 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
General Semiconductor |
21 |
BD240 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. |
General Electric Solid State |
22 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
23 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
24 |
BD240C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. |
General Electric Solid State |
25 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
26 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
27 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
28 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
29 |
BD242 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. |
General Electric Solid State |
30 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
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