| No. |
Part Name |
Description |
Manufacturer |
| 1 |
110CNQ045ASM |
45V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 2 |
111CNQ045ASM |
45V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 3 |
112CNQ030ASM |
30V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 4 |
113CNQ080ASM |
80V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 5 |
113CNQ100ASM |
100V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 6 |
115CNQ015ASM |
15V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 7 |
28C256ASM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 8 |
28C256ASM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 9 |
28C256ASM-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 10 |
28C256ASM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 11 |
28C256ASM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 12 |
28C256ASM-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 13 |
28C256ASM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 14 |
28C256ASM-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 15 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 16 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 17 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
| 18 |
2SA1721 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 19 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 20 |
2SC3515 |
Transistor Silicon NPN Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 21 |
2SC3672 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS |
TOSHIBA |
| 22 |
54FCT374ASMQB |
Octal D Flip-Flop with TRI-STATE Outputs |
National Semiconductor |
| 23 |
54FCT374ASMQR |
Octal D Flip-Flop with TRI-STATE Outputs |
National Semiconductor |
| 24 |
54FCT374ASMX |
Octal D Flip-Flop with TRI-STATE Outputs |
National Semiconductor |
| 25 |
74FCT374ASMQB |
Octal D Flip-Flop with TRI-STATE Outputs |
National Semiconductor |
| 26 |
74FCT374ASMQR |
Octal D Flip-Flop with TRI-STATE Outputs |
National Semiconductor |
| 27 |
74FCT374ASMX |
Octal D Flip-Flop with TRI-STATE Outputs |
National Semiconductor |
| 28 |
78H12ASM |
12 VOLT 5 AMP VOLTAGE REGULATOR |
New Era Electronics |
| 29 |
80CNQ035ASM |
35V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 30 |
80CNQ035ASM |
Schottky Rectifier |
Microsemi |
| | | |
