| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
| 2 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 3 |
2N3927 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 4 |
AUIRF8736M2 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 137 amperes optimized with low on resistance |
International Rectifier |
| 5 |
AUIRF8736M2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 137 amperes optimized with low on resistance |
International Rectifier |
| 6 |
BFS22 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 7 |
BFW46 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
| 8 |
BLY38 |
Silicon NPN planar epitaxial transistor for driver stages in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
| 9 |
BLY53 |
Silicon NPN planar epitaxial transistor for power amplifiers in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
| 10 |
BLY57 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 11 |
BLY58 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 12 |
BLY87 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 13 |
BLY88 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 14 |
BLY89 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 15 |
IRF6612TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes. |
International Rectifier |
| 16 |
IRF6708S2 |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 17 |
IRF6708S2TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 18 |
IRF6708S2TRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 19 |
IRF6722M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 20 |
IRF6722MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 21 |
IRF6722MTRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 22 |
IRF6722S |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 23 |
IRF6722STR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 24 |
MCRF355 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran |
Microchip |
| 25 |
MCRF360 |
The MCRF360 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features operating at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran |
Microchip |
| 26 |
MM1603 |
NPN silicon RF Power Transistor designed for amplifier or oscillator applications in military and industrial equipment, 25W Power Output at 13,6V |
Motorola |
| 27 |
PB-IRF6612 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes. |
International Rectifier |
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