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Datasheets for AT 3

Datasheets found :: 154
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No. Part Name Description Manufacturer
1 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
2 2N6531 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. General Electric Solid State
3 2N6533 8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. General Electric Solid State
4 2N6666 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
5 AD8551 Worlds Most Accurate Single-Channel Amplifier at 3 V-5 V Analog Devices
6 AD8552 Worlds Most Accurate Dual-Channel Amplifier at 3 V-5 V Analog Devices
7 AD85520001RR Worlds Most Accurate Dual-Channel Amplifier at 3 V-5 V Analog Devices
8 AD8554 World's Most Accurate Quad-Channel Amplifier at 3 V-5 V Analog Devices
9 AN673 ST6 - REDUCING CURRENT CONSUMPTION AT 32KHZ WITH ST62 SGS Thomson Microelectronics
10 ATAM862-3 Microcontroller with UHF ASK/FSK Transmitter at 315 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD = ... Atmel
11 BD643 8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. General Electric Solid State
12 BD645 8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. General Electric Solid State
13 BD647 8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. General Electric Solid State
14 BD649 8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. General Electric Solid State
15 BM317AT βM317AT 3-Terminal Adjustable Positive Voltage Regulator IPRS Baneasa
16 BM337AT βM337AT 3-Terminal Adjustable Negative Voltage Regulator IPRS Baneasa
17 CGY0918 GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) Siemens
18 CGY184 GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) Siemens
19 CGY96 GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) Siemens
20 EB-109 Application Note - Low cost UHF device gives broadband performance at 3.0 watts output Motorola
21 GC80960RD i960 RP/RD I/O processor at 3.3 volts, 66 MHz version Intel
22 GC80960RP i960 RP/RD I/O processor at 3.3 volts, 33 MHz version Intel
23 GF128 Germanium PNP high-frequency transistor for amplifier stages at 37MHz RFT
24 GF128 Germanium PNP alloy diffusion transistor for amplifier stages at 37MHz RFT
25 I80960RD I/O PROCESSOR AT 3.3 VOLTS, 33 and 66 MHz Intel
26 I80960RP I/O PROCESSOR AT 3.3 VOLTS, 33 and 66 MHz Intel
27 I960 i960 RP/RD I/O PROCESSOR AT 3.3 VOLTS Intel
28 IDT72V73250BB 8K x 8K TSI, 16 I/O at 32Mbps, 3.3V IDT
29 IDT72V73250BB 8K x 8K TSI, 16 I/O at 32Mbps, 3.3V IDT
30 IDT72V73250DA 8K x 8K TSI, 16 I/O at 32Mbps, 3.3V IDT


Datasheets found :: 154
Page: | 1 | 2 | 3 | 4 | 5 |



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