Datasheets for AT 4

Datasheets found :: 24 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	2N6576	15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A.	General Electric Solid State
2	2N6577	15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A.	General Electric Solid State
3	2N6578	15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A.	General Electric Solid State
4	A2000V	2xLF amplifier, 2x5W at 4 ohms, possibly equivalent TDA4925	RFT
5	ATAM862-4	Microcontroller with UHF ASK/FSK Transmitter at 434 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD = ...	Atmel
6	ATTINY28L	2K Flash Program Memory, 128 Bytes SRAM (+32bytes register file), Keyboard interrupt. Up to 4 MIPS throughput at 4 MHz	Atmel
7	BQ24032ARHLR	Dual Input Li-Ion Charger with Dynamic Power Path, Output regulated to 4.4V, Vbat 4.2V 20-VQFN -40 to 85	Texas Instruments
8	BQ24032ARHLTG4	Dual Input Li-Ion Charger with Dynamic Power Path, Output regulated to 4.4V, Vbat 4.2V 20-VQFN -40 to 85	Texas Instruments
9	BQ24038RHLRG4	Dual Input Li-Ion Charger with Dynamic Power Path, Output regulated to 4.4V, Vbat 4.4V 20-VQFN -40 to 85	Texas Instruments
10	BQ24038RHLTG4	Dual Input Li-Ion Charger with Dynamic Power Path, Output regulated to 4.4V, Vbat 4.4V 20-VQFN -40 to 85	Texas Instruments
11	BU426A	Transistor polarity NPN Voltage Vce sat max 3 V Voltage Vceo 400 V Current Ic @ Vce sat 4 A Time fall @ Ic 0.75 ?s Current Ic av. 6 A Power Ptot 70 W Voltage Vces 900 V	SGS Thomson Microelectronics
12	FODM8801	OptoHiTTM Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package	Fairchild Semiconductor
13	IRF6662	A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes.	International Rectifier
14	IRF6662TR1	Leaded A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes.	International Rectifier
15	IRF6662TR1PBF	A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes.	International Rectifier
16	IRF6662TRPBF	A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes.	International Rectifier
17	PB-IRF6662	Leaded A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes.	International Rectifier
18	TLC8188CDA	CIS/CCD SCANNER AFE USING PIPELINE-ARCHITECTURE ADC AT 4MSPS	Texas Instruments
19	TRW64601	Microwave Power Oscillator Transistor - 350mW at 4GHz, Up to 5GHz	TRW
20	TRW64602	Microwave Power Oscillator Transistor - 650mW at 4GHz	TRW
21	TSOP5700	IR Receiver for High Data Rate PCM at 455 kHz	Vishay
22	TSOP7000	IR Receiver for High Data Rate PCM at 455 kHz	Vishay
23	TSOP7000SW1	IR Receiver for High Data Rate PCM at 455 kHz	Vishay
24	TSOP7000ZC1	IR Receiver for High Data Rate PCM at 455 kHz	Vishay

Datasheets found :: 24 Page: | 1 |