| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 2 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 3 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 4 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 5 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 6 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 7 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 8 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 9 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 10 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 11 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 12 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 13 |
AB-085 |
SIMPLE CIRCUIT DELIVERS 38Vp-p AT 5A FROM 28V UNIPOLAR SUPPLY |
Burr Brown |
| 14 |
AUIRF7732S2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 58 amperes optimized with low on resistance |
International Rectifier |
| 15 |
AUIRF7732S2TR1 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 58 amperes optimized with low on resistance |
International Rectifier |
| 16 |
AUIRL7732S2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 58 amperes optimized with low on resistance |
International Rectifier |
| 17 |
AUIRL7766M2 |
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 51 amperes optimized with low on resistance |
International Rectifier |
| 18 |
AUIRL7766M2TR1 |
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 51 amperes optimized with low on resistance |
International Rectifier |
| 19 |
HAT1000-S |
Current Transducer HAT 500~1500-S |
LEM |
| 20 |
HAT1200-S |
Current Transducer HAT 500~1500-S |
LEM |
| 21 |
HAT1500-S |
Current Transducer HAT 500~1500-S |
LEM |
| 22 |
HAT500-S |
Current Transducer HAT 500~1500-S |
LEM |
| 23 |
HAT800-S |
Current Transducer HAT 500~1500-S |
LEM |
| 24 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
| 25 |
HFBR-0538 |
HFBR-0538 · Evaluation Kit designed for INTERBUS-S applications that operate at 500kB and 2MBd |
Agilent (Hewlett-Packard) |
| 26 |
IRF6614TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
| 27 |
IRF6617TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes. |
International Rectifier |
| 28 |
IRF6621TR1 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
| 29 |
IRF6621TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
| 30 |
IRF6621TRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
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