| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 2 |
AT24C11 |
1K, 2-wire Bus Serial EEPROM, Non-cascadable, high speed at medium voltage. |
Atmel |
| 3 |
AT24C32A |
32/64K, 2-Wire Bus Serial EEPROM w/Cascadable Features, Full Write Protect and high speed at medium voltage. |
Atmel |
| 4 |
AT24C64A |
32/64K, 2-Wire Bus Serial EEPROM w/Cascadable Features, Full Write Protect and high speed at medium voltage. |
Atmel |
| 5 |
BU426A |
Transistor polarity NPN Voltage Vce sat max 3 V Voltage Vceo 400 V Current Ic @ Vce sat 4 A Time fall @ Ic 0.75 ?s Current Ic av. 6 A Power Ptot 70 W Voltage Vces 900 V |
SGS Thomson Microelectronics |
| 6 |
BUF405A |
Transistor polarity NPN Voltage Vce sat max 2.8 V Voltage Vceo 450 V Current Ic @ Vce sat 2.5 A Time fall @ Ic 0.1 ?s Current Ic av. 7.5 A Power Ptot 80 W Voltage Vces 1000 V |
SGS Thomson Microelectronics |
| 7 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 8 |
CXY11B |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 9 |
CXY11C |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 10 |
CXY19 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 11 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 12 |
DS26C32AT MWC |
CMOS Quad Differential Line Receivers |
National Semiconductor |
| 13 |
ELAN SC310 |
Elan SC310 Single-Chip, 32-Bit, PC/AT Microcontroller |
Advanced Micro Devices |
| 14 |
ESTAMAT MH |
ESTAmat MH |
Vishay |
| 15 |
ESTAMAT MH |
ESTAmat MH |
Vishay |
| 16 |
F-ZTAT |
F-ZTAT Microcomputer On-Board Writing Program, User's Manual |
Hitachi Semiconductor |
| 17 |
F-ZTAT |
F-ZTAT Microcomputer On-Board Programming, Application Note |
Hitachi Semiconductor |
| 18 |
FMM5048GJ |
VSAT MMIC |
Fujitsu Microelectronics |
| 19 |
GMS34004TM |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version |
Hynix Semiconductor |
| 20 |
GMS34112TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
| 21 |
GMS34140TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
| 22 |
IMP5115 |
9-Line SCSI Ter erminat minator |
IMP Inc |
| 23 |
IMP5115CD |
9-Line SCSI Ter erminat minator |
IMP Inc |
| 24 |
IMP5115CDT |
9-Line SCSI Ter erminat minator |
IMP Inc |
| 25 |
IMP5115CDW |
9-Line SCSI Ter erminat minator |
IMP Inc |
| 26 |
IMP5115CDWT |
9-Line SCSI Ter erminat minator |
IMP Inc |
| 27 |
IMP5115CPWP |
9-Line SCSI Ter erminat minator |
IMP Inc |
| 28 |
IMP5115CPWPT |
9-Line SCSI Ter erminat minator |
IMP Inc |
| 29 |
MDF100A30 |
Diode with flat mounting base which is designed for use in various rectifier applications |
SanRex |
| 30 |
MDF100A40 |
Diode with flat mounting base which is designed for use in various rectifier applications |
SanRex |
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