| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AM29F400AT-65EC |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 2 |
AM29F400AT-65ECB |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 3 |
AM29F400AT-65EI |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 4 |
AM29F400AT-65EIB |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 5 |
AM29F400AT-65FC |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 6 |
AM29F400AT-65FCB |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 7 |
AM29F400AT-65FI |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 8 |
AM29F400AT-65FIB |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 9 |
AM29F400AT-65SC |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 10 |
AM29F400AT-65SCB |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 11 |
AM29F400AT-65SI |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 12 |
AM29F400AT-65SIB |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 13 |
AT-603 |
Fixed Attenuators (N,BNC,TNC) |
Hirose Electric |
| 14 |
AT-606 |
Fixed Attenuators (N,BNC,TNC) |
Hirose Electric |
| 15 |
AT-610 |
Fixed Attenuators (N,BNC,TNC) |
Hirose Electric |
| 16 |
AT-620 |
Fixed Attenuators (N,BNC,TNC) |
Hirose Electric |
| 17 |
AT-635 |
DC-2 GHz, 35 dB, voltage variable absorptive attenuator |
MA-Com |
| 18 |
AT-635 |
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
Tyco Electronics |
| 19 |
AT-635PIN |
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
Tyco Electronics |
| 20 |
AT-635TR |
DC-2 GHz, 35 dB, voltage variable absorptive attenuator |
MA-Com |
| 21 |
AT-635TR |
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
Tyco Electronics |
| 22 |
AT-64020 |
Up to 4 GHz Linear Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 23 |
AT-64023 |
Up to 4 GHz Linear Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 24 |
AZ948-1AT-6D |
16 AMP LOW PROFILE POWER RELAY |
ZETTLER electronics |
| 25 |
AZ948-1AT-6DE |
16 AMP LOW PROFILE POWER RELAY |
ZETTLER electronics |
| 26 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
| 27 |
GS81032AT-6 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 28 |
GS81032AT-6I |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 29 |
GS82032AT-6 |
64K x 32 2M Synchronous Burst SRAM |
GSI Technology |
| 30 |
GS82032AT-6I |
64K x 32 2M Synchronous Burst SRAM |
GSI Technology |
| | | |
