| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SV128 |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS |
TOSHIBA |
| 2 |
1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 3 |
1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 4 |
1SV271 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 5 |
1SV298 |
pi Type Attenuator Applications |
SANYO |
| 6 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 7 |
2-OA1172 |
HF germanium pair diode for discriminator and radio detector circuits |
TUNGSRAM |
| 8 |
2N1141 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 9 |
2N1142 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 10 |
2N1143 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 11 |
2N1195 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 12 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 13 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 14 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 15 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 16 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 17 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 18 |
2N3323 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 19 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 20 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 21 |
2N3544 |
NPN silicon transistor for VHF and UHF oscillator applications |
Motorola |
| 22 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 23 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 24 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 25 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 26 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 27 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 28 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 29 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 30 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
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