| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 2 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
| 3 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 4 |
CZRM27C100PA |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 1%. |
Comchip Technology |
| 5 |
CZRM27C100PB |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 2%. |
Comchip Technology |
| 6 |
CZRM27C100PC |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 5%. |
Comchip Technology |
| 7 |
DS1065-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 8 |
DS1073M-100 |
3V EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 9 |
DS1073Z-100 |
3V EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 10 |
DS1075M-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 11 |
DS1075Z-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 12 |
DS1077U-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 13 |
DS1077Z-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 14 |
IFC125-42-3 |
AC/DC open frame. 125 Watts. Output 1: Vnom 3.3V, Imax 10.0A. Output 2: Vnom 5.0V, Imax 15.0A. Output 3: Vnom 12.0V, Imax 5.0A. Output 4: Vnom -12.0V, Imax 0.5A. |
International Power Sources |
| 15 |
ISPLSI5256VE-100LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 16 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 17 |
ISPLSI5256VE-100LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 18 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 19 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 20 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 21 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 22 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 23 |
ISPLSI5512VE-100LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 24 |
ISPLSI5512VE-100LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 25 |
ISPLSI5512VE-100LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 26 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 27 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 28 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 29 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 30 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| | | |
