| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 2 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
| 3 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 4 |
DS1065-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 5 |
DS1073M-100 |
3V EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 6 |
DS1073Z-100 |
3V EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 7 |
DS1075M-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 8 |
DS1075Z-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 9 |
DS1077U-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 10 |
DS1077Z-100 |
EconOscillator/divider, max 100MHz |
Dallas Semiconductor |
| 11 |
ISPLSI5256VE-100LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 12 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 13 |
ISPLSI5256VE-100LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 14 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 15 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 16 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 17 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 18 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 19 |
ISPLSI5512VE-100LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 20 |
ISPLSI5512VE-100LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 21 |
ISPLSI5512VE-100LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 22 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 23 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 24 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 25 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 26 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
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