| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GS74108AX-10 |
10ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
| 2 |
GS74108AX-10I |
10ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
| 3 |
GS74116AX-10 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 4 |
GS74116AX-10I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 5 |
GS74116AX-10IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 6 |
GS74116AX-10T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 7 |
GS74117AX-10 |
10ns 256K x 16 4Mb asynchronous SRAM |
GSI Technology |
| 8 |
GS74117AX-10I |
10ns 256K x 16 4Mb asynchronous SRAM |
GSI Technology |
| 9 |
MAX-100 |
91.8V; 20A ;144KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| | | |
