| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CB-66 |
Shape and dimensions JEDEC/D.A.T.A. package |
SESCOSEM |
| 2 |
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 3 |
CM1200HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 4 |
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 5 |
CM800HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 6 |
GS88218B-66 |
66MHz 18ns 514K x 18 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 7 |
GS88218B-66I |
66MHz 18ns 514K x 18 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 8 |
GS88236B-66 |
66MHz 18ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 9 |
GS88236B-66I |
66MHz 18ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 10 |
GS882Z18B-66 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
GSI Technology |
| 11 |
GS882Z18B-66I |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
GSI Technology |
| 12 |
GS882Z36B-66 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
GSI Technology |
| 13 |
GS882Z36B-66I |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
GSI Technology |
| 14 |
SFPB-66 |
Schottky Barrier Diode - 60V |
Sanken |
| 15 |
SPB-66S |
Schottky Barrier Diode - 60V |
Sanken |
| | | |
