| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 2 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 3 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 4 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 5 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 6 |
S-8051ANB-NA-X |
Voltage detector |
Epson Company |
| 7 |
TU410 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8 |
TU410/10 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 9 |
TU410/5 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| | | |
