| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SB1116A |
Silicon transistor |
NEC |
| 2 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 3 |
2SB1116A-T |
Silicon transistor |
NEC |
| 4 |
2SB1116A-T/JD |
Silicon transistor |
NEC |
| 5 |
2SB1116A-T/JM |
Silicon transistor |
NEC |
| 6 |
2SB1116A/JD |
Silicon transistor |
NEC |
| 7 |
2SB1116A/JM |
Silicon transistor |
NEC |
| 8 |
CSB1116A |
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE |
Continental Device India Limited |
| 9 |
KSB1116A |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 10 |
KSB1116AGBU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 11 |
KSB1116AGTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12 |
KSB1116ALBU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 13 |
KSB1116ALTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14 |
KSB1116AYBU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 15 |
KSB1116AYTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| | | |
